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IRS26310DJPbF
Application Information and Additional Details
Informations regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Enable Input
Fault Reporting and Programmable Fault Clear Timer
Over-Current Protection
Over-Temperature Shutdown Protection
DC bus over-voltage Protection
Truth Table: Undervoltage lockout, ITRIP, and ENABLE
Advanced Input Filter
Short-Pulse / Noise Rejection
Integrated Bootstrap Functionality
Bootstrap Power Supply Design
Separate Logic and Power Grounds
Tolerant to Negative V S Transients
PCB Layout Tips
Bootstrap FET limitation
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS26310D HVIC is designed to drive up to six MOSFET or IGBT power devices. Figures 1 and 2 illustrate
several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to
drive the gate of the power switch, is defined as I O . The voltage that drives the gate of the external power switch is
defined as V HO for the high-side power switch and V LO for the low-side power switch; this parameter is sometimes
generically called V OUT and in this case does not differentiate between the high-side or low-side output voltage.
V B
(or V CC )
HO
I O+
V B
(or V CC )
HO
(or LO)
V S
+
V HO (or V LO )
-
(or LO)
V S
I O-
(or COM)
Figure 1: HVIC sourcing current
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15
(or COM)
Figure 2: HVIC sinking current
? 2008 International Rectifier
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